WE CREATE
Design service
Our main business is to provide high quality state of the art custom design service of GaAs & GaN MMICs. Having a great experience in GaN and GaAs technology processes from world leading RF foundries we could help you to design High Power Amplifiers, Low Noise Amplifiers, Driver Amplifiers, High Linearity Amplifiers, Broadband Amplifiers, Phase Shifters, Attenuators, SPxT / SPDT, Switches, System level design (In-circuit Design).
Modeling
- Compact and behavioral model extraction
- Active and passive RF components
- Model validation
Measurements
Device characterization: Pulsed IV and S-parameters, Load Pull measurements, PA measurements
Design
Verification & packaging
WE MAKE
Products
Self matched GaN transistor
- Frequency range: S band
- Drain Efficiency: 60%
- Output Power: 280 Watts
- Gain: 11 dB
- Test conditions: Pulse width 100us, Duty Cycle 10%
Power amplifier, GaN MMIC
- Frequency range: X band
- Drain Efficiency: 40%
- Output Power: 225 Watts
- Gain: 20 dB
- Test conditions: Pulse width 100us, Duty Cycle 10%
Power amplifier, GaN MMIC
- Frequency range: S band
- Drain Efficiency: 60%
- Output Power: 280 Watts
- Gain: 11 dB
- Test conditions: Pulse width 100us, Duty Cycle 10%
Power amplifier, GaN MMIC
- Frequency range: C band
- Drain Efficiency: 60%
- Output Power: 50 Watts
- Gain: 11 dB
- Test conditions: Pulse width 100us, Duty Cycle 10%
TRUST
Indian Start UP certificate
INGAiN Technologies
Contact us
INGAiN Technologies Private Limited
1st Floor, Gopalan Complex, 45/3 Residency Road
Bengaluru – 560025